LIGHT INTENSITY AND TEMPERATURE EFFECT ON THE DC PARAMETERS OF OPTIMIZED nc-3C-SiC:H BASED SOLAR CELL

Abstract

The Hydrogenated nanocrystalline cubic silicon carbide (nc-3C-Si:H) based solar cell with interesting efficiency, find her place promoted in photovoltaic applications. To improve the sunlight absorption and its electrical performances, the structure of the solar cell can be optimized, combining new materials to form multi-layers solar cells. In this context, the nc-3C-SiC:H, having a wide band gap, excellent optical, electrical and structural properties is used as wide bandgap absorber layer. In this work, we report a theoretical study of new optimized nc-3C-SiC:H/ i-a-Si:H/ a-Si:H/ μc-Si solar cell using the SCAPS one dimension program. We investigate the temperature and incident light intensity effect on the DC parameters of the solar cell. For the proposed structure, optimal power conversion efficiency (PCE) of 16.89% is registered under AM1.5G spectrum at room temperature.