ANALYTICAL STUDY OF ELECTRONIC AND OPTICAL PROPERTIES OF InAs / InGaAs QUANTUM DOT LASER
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Date
2018-02-05
Journal Title
Journal ISSN
Volume Title
Publisher
University of Eloued جامعة الوادي
Abstract
As part of improving the properties of optoelectronic components, by a better quantum
confinement of electrons and holes, we carried out an analytical study of carrier dynamics in
quantum dots lasers (QDL). Our calculations are performed on the set of five rate equations
for carriers and photons in two energy states. The results of the curriers density, photon
density, output power, and the in /out scattering rates between the quantum dot (QD) and
quantum well (QW) versus the time and the injection current. Our results are in agreement
with others work and then a confirmation of the validity of this numerical model to reproduce
the electronic and the optical properties of quantum dot laser.
Description
Séminaire National Sur Laser Solaire Et Matériaux ElOeued 5-6 Février 2018
Keywords
laser semiconductor, quantum dot, InAs / InGaAs, rate equations model