ANALYTICAL STUDY OF ELECTRONIC AND OPTICAL PROPERTIES OF InAs / InGaAs QUANTUM DOT LASER

Abstract

As part of improving the properties of optoelectronic components, by a better quantum confinement of electrons and holes, we carried out an analytical study of carrier dynamics in quantum dots lasers (QDL). Our calculations are performed on the set of five rate equations for carriers and photons in two energy states. The results of the curriers density, photon density, output power, and the in /out scattering rates between the quantum dot (QD) and quantum well (QW) versus the time and the injection current. Our results are in agreement with others work and then a confirmation of the validity of this numerical model to reproduce the electronic and the optical properties of quantum dot laser.