Development of graded band gap intrinsic layers for Single-junction a-SiH solar cell
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Date
2018-12-10
Journal Title
Journal ISSN
Volume Title
Publisher
University of Eloued جامعة الوادي
Abstract
the influence of the absorber layer (i-layer) properties on the amorphous solar cells parameters has been an object of research since the 1980s. In this study, a numerical simulation was carried out to study the influence of the intrinsic layer by using a novel technique based on graded band gap for amorphous single junction solar cells. In this context, we use the software called AMPS-1D. The optimized properties of the different layers of a-Si:H solar cell, especially intrinsic layer, were suggested to obtain the maximum conversion efficiency. Indeed, the use of intrinsic multilayer can control the spectral overlap by employing band-gap grading which the potential initial conversion efficiency of single-junction solar cell reach to 11.52%.
Description
International Symposium on Mechatronics and Renewable Energies El-Oued 10- 11 December 2018
Keywords
Hydrogenated amorphous silicon, Absorber layer, graded band gap, Solar cells.