Development of graded band gap intrinsic layers for Single-junction a-SiH solar cell

dc.contributor.authorIdda Ahmed
dc.contributor.authorAyat, Laila
dc.contributor.authorDaoudi, Mebarka
dc.contributor.authorBenslimane, Hassane
dc.date.accessioned2019-05-27T09:27:40Z
dc.date.available2019-05-27T09:27:40Z
dc.date.issued2018-12-10
dc.descriptionInternational Symposium on Mechatronics and Renewable Energies El-Oued 10- 11 December 2018en_US
dc.description.abstractthe influence of the absorber layer (i-layer) properties on the amorphous solar cells parameters has been an object of research since the 1980s. In this study, a numerical simulation was carried out to study the influence of the intrinsic layer by using a novel technique based on graded band gap for amorphous single junction solar cells. In this context, we use the software called AMPS-1D. The optimized properties of the different layers of a-Si:H solar cell, especially intrinsic layer, were suggested to obtain the maximum conversion efficiency. Indeed, the use of intrinsic multilayer can control the spectral overlap by employing band-gap grading which the potential initial conversion efficiency of single-junction solar cell reach to 11.52%.en_US
dc.identifier.urihttps://dspace.univ-eloued.dz/handle/123456789/1729
dc.language.isoenen_US
dc.publisherUniversity of Eloued جامعة الواديen_US
dc.subjectHydrogenated amorphous silicon, Absorber layer, graded band gap, Solar cells.en_US
dc.titleDevelopment of graded band gap intrinsic layers for Single-junction a-SiH solar cellen_US
dc.typeOtheren_US

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