Development of graded band gap intrinsic layers for Single-junction a-SiH solar cell
dc.contributor.author | Idda Ahmed | |
dc.contributor.author | Ayat, Laila | |
dc.contributor.author | Daoudi, Mebarka | |
dc.contributor.author | Benslimane, Hassane | |
dc.date.accessioned | 2019-05-27T09:27:40Z | |
dc.date.available | 2019-05-27T09:27:40Z | |
dc.date.issued | 2018-12-10 | |
dc.description | International Symposium on Mechatronics and Renewable Energies El-Oued 10- 11 December 2018 | en_US |
dc.description.abstract | the influence of the absorber layer (i-layer) properties on the amorphous solar cells parameters has been an object of research since the 1980s. In this study, a numerical simulation was carried out to study the influence of the intrinsic layer by using a novel technique based on graded band gap for amorphous single junction solar cells. In this context, we use the software called AMPS-1D. The optimized properties of the different layers of a-Si:H solar cell, especially intrinsic layer, were suggested to obtain the maximum conversion efficiency. Indeed, the use of intrinsic multilayer can control the spectral overlap by employing band-gap grading which the potential initial conversion efficiency of single-junction solar cell reach to 11.52%. | en_US |
dc.identifier.uri | https://dspace.univ-eloued.dz/handle/123456789/1729 | |
dc.language.iso | en | en_US |
dc.publisher | University of Eloued جامعة الوادي | en_US |
dc.subject | Hydrogenated amorphous silicon, Absorber layer, graded band gap, Solar cells. | en_US |
dc.title | Development of graded band gap intrinsic layers for Single-junction a-SiH solar cell | en_US |
dc.type | Other | en_US |
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