EFFECT OF ANNEALING TEMPERATURE AND INDIUM DOPING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF TIN OXIDE (SnO 2 )THIN FILMS DEPOSITED BY ULTRASONIC SPRAYTECHNIQUE
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Date
2018-05-01
Journal Title
Journal ISSN
Volume Title
Publisher
جامعة الوادي university of eloued
Abstract
Highly transparent and semiconducting indum-n oxide films were deposited on a
glass substrate at 400°C using an ultrasonic spray technique. The effect of In-content andannealing temperature on the structural,optical and electrical properties were examined. The
X rays diffraction (XRD) analysis shows that In doped SnO films have polycrystalline natureThe preferential orientations are sensitive to indium doping and annealing temperature. Thefilms crystallite size and crystallinity are enhanced after annealing at 600°C for 30 min. Theasdeposited films show low
Description
aretical
Keywords
In-doped SnO2 ;High transparency; crystallinity; band gap.
Citation
K. Bennaceur1 , A. Attaf H. Saidi 1 , M.S. Aida2 , A. BouhdjerH. Ezzaouia3.EFFECT OF ANNEALING TEMPERATURE AND INDIUM DOPING ON STRUCTURAL, OP.Journal of Fundamental and Applied Sciences.VOL 10.NO 2. 1MAY2018.UNIVERCITY ELOUED.28 Feburary 2018http://www.jfas.info