EFFECT OF ANNEALING TEMPERATURE AND INDIUM DOPING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF TIN OXIDE (SnO 2 )THIN FILMS DEPOSITED BY ULTRASONIC SPRAYTECHNIQUE

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dc.contributor.authorK., Bennaceur
dc.contributor.authorA., . Attaf
dc.contributor.authorH., . Saidi
dc.contributor.authorM.S., Aida
dc.contributor.authorA., Bouhdjer
dc.contributor.authorH., . Ezzaouia3
dc.date.accessioned2023-03-19T10:52:24Z
dc.date.available2023-03-19T10:52:24Z
dc.date.issued2018-05-01
dc.descriptionareticalen_US
dc.description.abstractHighly transparent and semiconducting indum-n oxide films were deposited on a glass substrate at 400°C using an ultrasonic spray technique. The effect of In-content andannealing temperature on the structural,optical and electrical properties were examined. The X rays diffraction (XRD) analysis shows that In doped SnO films have polycrystalline natureThe preferential orientations are sensitive to indium doping and annealing temperature. Thefilms crystallite size and crystallinity are enhanced after annealing at 600°C for 30 min. Theasdeposited films show lowen_US
dc.identifier.citationK. Bennaceur1 , A. Attaf H. Saidi 1 , M.S. Aida2 , A. BouhdjerH. Ezzaouia3.EFFECT OF ANNEALING TEMPERATURE AND INDIUM DOPING ON STRUCTURAL, OP.Journal of Fundamental and Applied Sciences.VOL 10.NO 2. 1MAY2018.UNIVERCITY ELOUED.28 Feburary 2018http://www.jfas.infoen_US
dc.identifier.urihttp://dspace.univ-eloued.dz/handle/123456789/17160
dc.language.isoenen_US
dc.publisherجامعة الوادي university of eloueden_US
dc.relation.ispartofseries1112-9867;
dc.subjectIn-doped SnO2 ;High transparency; crystallinity; band gap.en_US
dc.titleEFFECT OF ANNEALING TEMPERATURE AND INDIUM DOPING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF TIN OXIDE (SnO 2 )THIN FILMS DEPOSITED BY ULTRASONIC SPRAYTECHNIQUEen_US
dc.typeArticleen_US

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