MISE EN EVIDENCE DE DEFAUTS ACTIFS LUMINESCENTS DANS LE ZnO PAR PHOTOLUMINESCENCE ET TSC
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Date
2018-02-05
Journal Title
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Publisher
University of Eloued جامعة الوادي
Abstract
In this work, we have, experimentally, investigated the luminescence defect in ZnO thin film
deposited onto crystalline Si substrate. The studied film was deposited by DC reactive
sputtering technique, under (Ar + O2) plasma at 373 K, durig 1 hour and annealed at 573 K
during 1 hour. The UV-Visible transmittance and ellipsometrie characterisations revealed that
the optical energy band gap and the film thickness are respectively, around to 3.35 eV and 50
nm. The photoluminescence spectrum measured at room temperature indicates that the
deposited film presente a UV luminescence peak at 384 nm (3.21 eV). The current-potentialtemperature
and the stimulated current measurements indicate the presence of a shallow level
with activation energy around to 0.35 eV, attributed to the interstial zinc or oxygen vacancies.
Description
Séminaire National Sur Laser Solaire Et Matériaux ElOeued 5-6 Février 2018
Keywords
Zinc oxide, thin films, photolumencence, TSC measurments, reacctive sputtering.