Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

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dc.contributor.authorSadoun, Ali
dc.contributor.authorKemerchou, Imad
dc.date.accessioned2023-05-14T10:20:16Z
dc.date.available2023-05-14T10:20:16Z
dc.date.issued2020-06-20
dc.descriptionArticleen_US
dc.description.abstractIn this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K). Electrical parameters of Au/InSb/InP such as barrier height (Φb), ideality factor and series resistance have been calculated by employing the conventional (I-V), Norde, Cheung and Chattopadhyay methods. Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance, RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K) are 0.602-0.69eV, 1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas- Silvaco-Tcad logicalen_US
dc.identifier.citationSadoun, Ali. Kemerchou ,Imad. Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K). International Journal of Energetica. Vo5. No 01.20/06/2020.faculty of technology. university of el oued. [visited in ../../….]. available from [copy the link here]en_US
dc.identifier.issn2543-3717
dc.identifier.urihttp://dspace.univ-eloued.dz/handle/123456789/22807
dc.language.isoenen_US
dc.publisherجامعة الوادي - university of el oueden_US
dc.subjectCheung and Chattopadhyay methods, Schottky barrier, Schottky diode, SBH, Silvacoen_US
dc.titleExtraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)en_US
dc.typeArticleen_US

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