Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)
| dc.contributor.author | Sadoun, Ali | |
| dc.contributor.author | Kemerchou, Imad | |
| dc.date.accessioned | 2023-05-14T10:20:16Z | |
| dc.date.available | 2023-05-14T10:20:16Z | |
| dc.date.issued | 2020-06-20 | |
| dc.description | Article | en_US | 
| dc.description.abstract | In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K). Electrical parameters of Au/InSb/InP such as barrier height (Φb), ideality factor and series resistance have been calculated by employing the conventional (I-V), Norde, Cheung and Chattopadhyay methods. Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance, RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K) are 0.602-0.69eV, 1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas- Silvaco-Tcad logical | en_US | 
| dc.identifier.citation | Sadoun, Ali. Kemerchou ,Imad. Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K). International Journal of Energetica. Vo5. No 01.20/06/2020.faculty of technology. university of el oued. [visited in ../../….]. available from [copy the link here] | en_US | 
| dc.identifier.issn | 2543-3717 | |
| dc.identifier.uri | https://dspace.univ-eloued.dz/handle/123456789/22807 | |
| dc.language.iso | en | en_US | 
| dc.publisher | جامعة الوادي - university of el oued | en_US | 
| dc.subject | Cheung and Chattopadhyay methods, Schottky barrier, Schottky diode, SBH, Silvaco | en_US | 
| dc.title | Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K) | en_US | 
| dc.type | Article | en_US | 
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