Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)
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Date
2020-06-20
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جامعة الوادي - university of el oued
Abstract
In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode
based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K). Electrical
parameters of Au/InSb/InP such as barrier height (Φb), ideality factor and series resistance have
been calculated by employing the conventional (I-V), Norde, Cheung and Chattopadhyay methods.
Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance,
RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K) are 0.602-0.69eV,
1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas-
Silvaco-Tcad logical
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Keywords
Cheung and Chattopadhyay methods, Schottky barrier, Schottky diode, SBH, Silvaco
Citation
Sadoun, Ali. Kemerchou ,Imad. Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K). International Journal of Energetica. Vo5. No 01.20/06/2020.faculty of technology. university of el oued. [visited in ../../….]. available from [copy the link here]