SIMULATION STUDY OF THE PHOTOTRANSPORT IN AMORPHOUS SEMICONDUCTORS FROM TIME-OF-FLIGHT PHOTOCURRENT ANALYSIS

Simple item page
dc.contributor.authorSerdouk, Fadila
dc.contributor.authorBenkhedir, Mohamed-Lotfi
dc.date.accessioned2019-06-06T08:07:58Z
dc.date.available2019-06-06T08:07:58Z
dc.date.issued2018-02-05
dc.descriptionSéminaire National Sur Laser Solaire Et Matériaux ElOeued 5-6 Février 2018en_US
dc.description.abstractTime -of -flight transient photocurrent has been numerically analyzed. It is shown that the charge –carrier transit time can be determined in both non-dispersive and dispersive transport. It is also shown that the localized state distributions can be determined from the analysis of the photocurrenten_US
dc.identifier.urihttps://dspace.univ-eloued.dz/handle/123456789/2433
dc.language.isoenen_US
dc.publisherUniversity of Eloued جامعة الواديen_US
dc.subjectAmorphous semiconductor, Density of localized states, Phototransport, Time-offlight, Inverse Laplace transformen_US
dc.titleSIMULATION STUDY OF THE PHOTOTRANSPORT IN AMORPHOUS SEMICONDUCTORS FROM TIME-OF-FLIGHT PHOTOCURRENT ANALYSISen_US
dc.typeOtheren_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
SIMULATION STUDY OF THE PHOTOTRANSPORT IN.pdf
Size:
559.75 KB
Format:
Adobe Portable Document Format
Description:
Séminaire National Sur Laser Solaire Et Matériaux ElOeued 5-6 Février 2018
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

01.Séminaire National Sur Laser Solaire Et Matériaux ElOeued 5-6 Février 2018