SIMULATION STUDY OF THE PHOTOTRANSPORT IN AMORPHOUS SEMICONDUCTORS FROM TIME-OF-FLIGHT PHOTOCURRENT ANALYSIS

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Date

2018-02-05

Journal Title

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Publisher

University of Eloued جامعة الوادي

Abstract

Time -of -flight transient photocurrent has been numerically analyzed. It is shown that the charge –carrier transit time can be determined in both non-dispersive and dispersive transport. It is also shown that the localized state distributions can be determined from the analysis of the photocurrent

Description

Séminaire National Sur Laser Solaire Et Matériaux ElOeued 5-6 Février 2018

Keywords

Amorphous semiconductor, Density of localized states, Phototransport, Time-offlight, Inverse Laplace transform

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