Sol-gel synthesis of Al-Tin oxide thin films deposited via dip-coating technique
| dc.contributor.author | A. Ammari | |
| dc.date.accessioned | 2024-06-11T10:23:57Z | |
| dc.date.available | 2024-06-11T10:23:57Z | |
| dc.date.issued | 2019-02-24 | |
| dc.description | Intervention | |
| dc.description.abstract | SnO2 thin films have potential applications in the areas of solar cells [1], gas sensor materials [2], catalysis [3], architectural windows [4] and optoelectronic devices (light emitting diodes [5] and transparent field effect transistors [6]. High quality thin films are indispensable for the optoelectronic devices. In this respect, SnO2 is a material of choice owing to its wider optical transparency than many other metal oxide semiconductors with ~ 80% in the visible range [7]. SnO2 exists in the tetragonal rutile crystal (SG: P42/mnm) [8] with a band gap of ~ 3.6 eV. The performance of devices based SnO2 is known to strongly depend on the transportation over the grains and grains boundaries [9]. The present study, deals with the characteristics of the electrical conduction. The effect of Al-doping on both the optical and electrical properties of the films is investigated. | |
| dc.identifier.citation | A. Ammari. Sol-gel synthesis of Al-Tin oxide thin films deposited via dip-coating technique. International Symposium on Technology & Sustainable Industry Development, ISTSID’2019. Faculty Of Technology. University Of Eloued. [Visited in ../../….]. Available from [copy the link here]. | |
| dc.identifier.uri | https://dspace.univ-eloued.dz/handle/123456789/33399 | |
| dc.language.iso | en | |
| dc.publisher | University of Eloued | |
| dc.subject | Thin films | |
| dc.subject | Al-doped SnO2 | |
| dc.subject | sol-gel | |
| dc.subject | impedance spectroscopy | |
| dc.title | Sol-gel synthesis of Al-Tin oxide thin films deposited via dip-coating technique | |
| dc.type | Intervention |