Sol-gel synthesis of Al-Tin oxide thin films deposited via dip-coating technique
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Date
2019-02-24
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University of Eloued
Abstract
SnO2 thin films have potential applications in the areas of
solar cells [1], gas sensor materials [2], catalysis [3],
architectural windows [4] and optoelectronic devices (light
emitting diodes [5] and transparent field effect transistors [6].
High quality thin films are indispensable for the optoelectronic
devices. In this respect, SnO2 is a material of choice owing to
its wider optical transparency than many other metal oxide
semiconductors with ~ 80% in the visible range [7]. SnO2
exists in the tetragonal rutile crystal (SG: P42/mnm) [8] with a
band gap of ~ 3.6 eV. The performance of devices based SnO2
is known to strongly depend on the transportation over the
grains and grains boundaries [9]. The present study, deals with
the characteristics of the electrical conduction. The effect of
Al-doping on both the optical and electrical properties of the
films is investigated.
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Intervention
Keywords
Thin films, Al-doped SnO2, sol-gel, impedance spectroscopy
Citation
A. Ammari. Sol-gel synthesis of Al-Tin oxide thin films deposited via dip-coating technique. International Symposium on Technology & Sustainable Industry Development, ISTSID’2019. Faculty Of Technology. University Of Eloued. [Visited in ../../….]. Available from [copy the link here].