ANNEALING EFFECT ON THE PROPERTIES OF INDIUM TIN OXIDES (IN2O3 :SN) THIN FILMS PREPARED BY ULTRASONIC SPRAY TECHNIC

Abstract

Indium tin oxide (ITO) films were deposited on glass substrates using ultrasonic spray technic. The ITO films (with 4% Sn-doping concentration at substrate temperature 400°C) were annealed in the air at 450, 500, and 550 °C for 2 h. The structural, morphological, electrical and optical properties of ITO films were investigated using: XRD, SEM, four-point probe and UV–visible. The XRD analysis reveals that the films are polycrystalline with body-centered cubic structure, and the cristaline state of the films improve with the increase of annealing temperature. Surface morphology of the films changes with the change of the annealing temperature. The high optical transmittance observed in the films annealed at 500 °C. The films annealed at 550°C shows the low electrical resistivity 25 10-4 Ωcm due to the decrease of the odsorbed oxygen on the surface morphology of this films.