Browsing by Author "Benramache, Said"

Now showing 1 - 9 of 9

A comparative study on structural and optical properties of ZnO and Al-doped ZnO thin films obtained by ultrasonic spray method using different solvents
(Urban & Fischer, 2014-07-01) Gahtar, Abdelouahab; Rahal, Achour; Benhaoua, Boubaker; Benramache, Said
Abstract Transparent conducting ZnO and Al doped ZnO thin films were deposited on glass substrate by ultrasonic spray method. The thin films with concentration of 0.1 M were deposited at 350 °C with 2 min of deposition time. The effects of ethanol and methanol solution before and after doping on the structural, optical and electrical properties were examined. The DRX analyses indicated that ZnO films have nanocrystalline nature and hexagonal wurtzite structure with (1 0 0) and (0 0 2) preferential orientation corresponding to ZnO films resulting from methanol and ethanol solution, respectively. The crystallinity of the thin films improved with methanol solution after doping to (0 0 2) oriented. All films exhibit an average optical transparency about 90%, in the visible range. The band gaps values of ZnO thin films are increased after doping from 3.10 to 3.26 eV and 3.27 to 3.30 eV upon Al doping obtained by ethanol and methanol solution, respectively. The electrical conductivity increase from 7.5 to 15.2 (Ω cm)−1 of undoped to Al doped ZnO thin films prepared by using ethanol solution. However, for the methanol solution; the electrical conductivity of the film is stabilized after doping.
Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films
(IOP Publishing, 2012-09-01) Benramache, Said; Benhaoua, Boubaker; Chabane, Foued
Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 (Ω·cm)-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.
The effects of solvent nature on spray-deposited ZnO thin film prepared from Zn (CH3COO)2, 2H2O
(Urban & Fischer, 2014-01-01) Benramache, Said; Rahal, Achour; Benhaoua, Boubaker
Transparent conducting zinc oxide was deposited on glass substrate by ultrasonic spray method. The ZnO samples with concentration of 0.1 M were deposited at 300, 350 and 400 °C with 2 min of deposition time. The effects of substrate temperature, ethanol and methanol solution on the structural, electrical and optical properties were examined. The DRX analyses indicated that ZnO films have polycrystalline nature and hexagonal wurtzite structure with (1 0 0) and (0 0 2) preferential orientation corresponding to ZnO films resulting from methanol and ethanol, respectively. The crystallinity of the thin films improved with ethanol solution. All films exhibit an average optical transparency about 80%, in the visible range. The band gap energy of ZnO films obtained with methanol solution higher than of ethanol solution for all the films. The electrical resistivity decrease with ZnO obtained from ethanol indicated; due to the maximum crystallite size retched at this point.
Influence of annealing temperature on structural and optical properties of ZnO: In thin films prepared by ultrasonic spray technique
(Superlattices and Microstructures, 2012-12) Benramache, Said; Benhaoua, Boubaker
Transparent conducting indium doped zinc oxide was deposited on glass substrate by ultrasonic spray method. The In doped ZnO samples with indium concentration of 3 wt.% were deposited at 300, 350 and 400 °C with 2 min of deposition time. The effects of substrate temperature and annealing temperature on the structural, electrical and optical properties were examined. The DRX analyses indicated that In doped ZnO films have polycrystalline nature and hexagonal wurtzite structure with (0 0 2) preferential orientation and the maximum average crystallite size of ZnO: In before and annealed at 500 °C were 45.78 and 55.47 nm at a substrate temperature of 350 °C. The crystallinity of the thin films increased by increasing the substrate temperature up 350 °C, the crystallinity improved after annealing temperature at 500 °C. The film annealed at 500 °C and deposited at 350 °C show lower absorption within the visible wavelength region. The band gap energy increased from Eg = 3.25 to 3.36 eV for without annealing and annealed films at 500 °C, respectively, indicating that the increase in the transition tail width. This is due to the increase in the electrical conductivity of the films after annealing temperature.
Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films
(IOP Publishing, 2013-02-01) Benramache, Said; Chabane, Foued; Benhaoua, Boubaker; Lemmadi, Fatima Z
This paper examines the growth of ZnO thin films on glass substrate at 350 °C using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and electrical properties of ZnO thin films. The as-grown films exhibit a hexagonal structure wurtzite and are (002) oriented. The maximum value of grain size G = 63.99 nm is attained for ZnO films grown at 2 min. The average transmittance is about 80%, thus the films are transparent in the visible region. The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min. The minimum value of electrical resistivity of the films is 0.13 Ω·cm obtained at 2 min. A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350 °C has been reported.
Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique
(IOP Publishing, 2013-07-01) Gahtar, Abdelouahab; Benramache, Said; Benhaoua, Boubaker; Chabane, Foued
Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350 °C. Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%. All the films have low absorbance in the visible region, thus the films are transparent in the visible region; the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 (Ω·cm)−1. So the best results are achieved in Al doped ZnO film with 3 wt%.
Preparation of transparent, conductive ZnO:Co and ZnO:In thin films by ultrasonic spray method
(Journal of Nanostructure in Chemistry. Springer Berlin Heidelberg, 2013-12) Benramache, Said; Benhaoua, Boubaker; Bentrah, Hamza
This paper examines the growth of undoped and doped thin films with (Co and In) on glass substrate at 350°C using ultrasonic spray technique. We have investigated the influence of doping concentrations ranging from 0 to 4 wt.% on structural, optical, and electrical properties of ZnO thin films. Zinc acetate dehydrate, CoCl3 4H2O or InCl3, ethanol, and monoethanolamine were used as a starting materials, dopant source, solvent, and stabilizer, respectively. The X-ray diffraction analysis indicated that the undoped and doped ZnO thin films have polycrystalline nature and hexagonal wurtzite structure with (002) preferential orientation. The maximum average crystallite sizes of ZnO:Co and ZnO:In were 55.46 and 45.78 nm at concentrations of 2 wt.% Co and 3 wt.% In, respectively, indicating that the crystallinity of doped films improved after doping. The optical absorption spectra showed that all undoped and doped ZnO films are transparent within the visible wavelength region. The band gap energy of ZnO:Co thin films increased after doping from 3.25 to 3.36 eV; however, the optical gap of ZnO:In decreases after doping from 3.25 to 3.18 eV, indicating the increase and decrease, respectively, in the transition tail width. The electrical conductivity of doped films is stabilized after doping. Transparent, conductive Co-doped ZnO thin films deposited by ultrasonic spray technique are of good quality.
The structural, optical and electrical properties of nanocrystalline ZnO: Al thin films
(Academic Press, 2014-04) Benhaoua, Boubaker; Rahal, Achour; Benramache, Said
The Al doped ZnO thin films were deposited by ultrasonic spray technique. The influence of Al doping on structural, optical and electrical properties of the ZnO thin films was studied. A set of Al doped ZnO (0–3.5 wt.%) were deposited at 350 °C. Nanocrystalline films with a hexagonal wurtzite structure with a strong (0 0 2) preferred orientation were observed after Al doping. The maximum value of grain size (33.28 nm) is attained with Al doped ZnO at 3 wt.%. Texture coefficient TC(h k l) of the four major peaks where evaluated. Optically, in visible region the transmissions spectra T(λ) show that the whole doped films exhibit lower values than the non doped one which has as transmittance more than 80%; whereas in the same region the optical transmissions of the doped films are affected by the doping ration. The band gap (Eg) increased after doping from 3.267 to 3.325 eV with increasing concentration of doping from 0 to 2.75 wt.%, respectively, according to the Burstein–Moss effect (blue shift of Eg) then beyond 3 wt.% in doping the band gap exhibit a slight decreasing due to the coexistence of Roth and Burstein–Moss effect. The electrical resistivity of the films decreased from 20 to 5.26 (Ω cm). The best results are achieved with 2.75 wt.% Al doped ZnO film.
Study of Zn-Ni Alloy Coatings Modified by Nano-Al2O3 Particles Incorporation
(University of Eloued جامعة الوادي, 2018-02-05) Diafi, Malika; Temam, Elhachmi Guettaf; Gasmi, Brahim; Benramache, Said; Adaika, Mohamed Lakhdar
The aim of this research work was to codeposit nano-Al2O3 particles into Zn-Ni alloy coatings in order to improve some surface ,properties, the influence of the concentration of Al2O3 is the principal object in order to improve the corrosion resistance of the deposit, which has been made by electroplating on steel substrates previously treated, have been studied by several characterization methods, as the X-ray diffraction, measurement of micro hardness and scanning electron microscopy (SEM), protection against corrosion properties studied in a solution of 3% NaCl in the potentiodynamic polarization measurements (Tafel), electrochemical impedance spectroscopy (EIS) to the potential of corrosion free. The parameters that characterize the corrosion behavior can be determined from the plots and Nyquist plots and chronopotentiometry. Trends of increasing the charge transfer resistance and the decrease of capacitance values. XRD and SEM results and identify any coatings Zn- Ni and Zn-Ni-Al2O3 alloy composition have similar phase ( γ-phase structure) and the addition of Al2O3 in the Zn-Ni matrix increases the microhardness, and we note the maximum hardness is obtained for 50 g/L Al2O3.