IJE_Vol 05 N 01

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Browsing IJE_Vol 05 N 01 by Author "Kemerchou, Imad"

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    Enhancing of CH3NH3SnI3 based solar cell efficiency by ETL engineering
    (جامعة الوادي - university of el oued, 2020-06-12) Hima, Abdelkader; Khechekhouche, ,Abderrahmane; Kemerchou, Imad
    Solar cells based on organic-inorganic perovskites (PVK) are the subject of several researches in laboratories around the world. One of the most promising hybrid perovskite is the methylammonium lead tri-iodide MAPbI3 that is suitable for sun light harvesting. But the MAPbI3 is a toxic material, so in this paper is proposed another nature friendly candidate which is the methylammonium tin tri-iodide MASnI3. The proposed material is inserted into an n-i-p heterojunction solar cell which structure is electron transport layer (ETL)/PVK/hole transport layer (HTL). The used HTL is the PEDOT: PSS in combination with one of two ETLs which are the PCBM and the IGZO. Simulation efforts using 1D SCAPS was carried. It is found that IGZO ETL based solar cell yields a higher power conversion efficiency (PCE) compared with PCBM ETL based solar cell in the same thickness
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    Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)
    (جامعة الوادي - university of el oued, 2020-06-20) Sadoun, Ali; Kemerchou, Imad
    In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K). Electrical parameters of Au/InSb/InP such as barrier height (Φb), ideality factor and series resistance have been calculated by employing the conventional (I-V), Norde, Cheung and Chattopadhyay methods. Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance, RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K) are 0.602-0.69eV, 1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas- Silvaco-Tcad logical