Investigation Of Ingan/si Double Junction Tandem Solar Cells

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dc.contributor.authorBouzid, F.
dc.contributor.authorHamlaoui, L.
dc.date.accessioned2020-10-20T08:59:35Z
dc.date.available2020-10-20T08:59:35Z
dc.date.issued2012-07-01
dc.descriptionArticale in Journal of fundamental and Applied Sciences Vol. 04 N. 02en_US
dc.description.abstractIn this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has been studied. The results show that a front recombination velocity value of 1e3cm/s is most advantageous and the use of relatively thick bottom cell is necessary to obtain conversion efficiency greater than 27%, at 300°k cell temperature. This efficiency will decrease as the operating temperature increase.en_US
dc.identifier.citationArticale in Journal of fundamental and Applied Sciences Vol. 04 N. 02en_US
dc.identifier.issn1112-9867
dc.identifier.urihttp://dspace.univ-eloued.dz/handle/123456789/7174
dc.language.isoenen_US
dc.publisherUniversity of Eloued جامعة الواديen_US
dc.subjectPhotovoltaic, Efficiency, Carrier lifetimes, Recombination velocity, Temperature.en_US
dc.titleInvestigation Of Ingan/si Double Junction Tandem Solar Cellsen_US
dc.typeArticleen_US

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