Elaboration And Dielectric Characterization Of A Doped Ferroelectric Material Type Pzt

dc.contributor.authorAbba, M.
dc.contributor.authorNecira, Z.
dc.contributor.authorAbdessalem, N.
dc.contributor.authorMeklid, A.
dc.contributor.authorMenasra, H.
dc.contributor.authorBoutarfaia, A.
dc.date.accessioned2020-10-20T10:16:08Z
dc.date.available2020-10-20T10:16:08Z
dc.date.issued2013-07-01
dc.descriptionArticale in Journal of fundamental and Applied Sciences Vol. 05 N. 02en_US
dc.description.abstractThe main objective of this work is based on the synthesis and dielectric characterization of a new material in ceramic PZT with a perovskite structure ABO3.We are interested to study the Quaternary system (doping in site A and site B) of general formula:Pb0.96Ba0.02Ca0.02[(Zr0.52Ti0.48)0.94(Zn1/3Ta2/3)0.03(In1/3Sb2/3)0.03]O3 short PZT-PBC-ZTIS.The sample selected for this study was prepared by the method of synthesis with solid way. Heat treatment was applied to these compositions at different temperatures: 1100, 1150,1180 and 1200 °C successively to optimize the sintering temperature optimal where the density of the sample is maximum (near theoretical density) and therefore the product has better physical quality.The study of dielectric properties of all samples showed a high permittivity dielectric εr = 18018, low dielectric loss: tgδ = 7.62%, for the composition sintered to 1180 ° C included in the phase morphotropique zone (FMP).en_US
dc.identifier.citationArticale in Journal of fundamental and Applied Sciences Vol. 05 N. 02en_US
dc.identifier.issn1112-9867
dc.identifier.urihttp://dspace.univ-eloued.dz/handle/123456789/7189
dc.language.isofren_US
dc.publisherUniversity of Eloued جامعة الواديen_US
dc.subjectCeramics PZT,Dielectric properties, Dielectric constant / loss constant.en_US
dc.titleElaboration And Dielectric Characterization Of A Doped Ferroelectric Material Type Pzten_US
dc.typeArticleen_US

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