STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF BULK CuIn0.7Ga0.3Se2 SEMICONDUCTOR COMPOUND

Abstract

In this work, we report on the study of structural, electrical and optical properties of the CuIn0.7Ga0.3Se2 compound. Analysis by X-ray diffraction showed that the prepared ingots are polycrystalline and of chalcopyrite structure. The preferential orientation in the plane (112) which is very suitable for the photovoltaic conversion was obtained. On the other hand, the lattice parameters a and c were calculated from the X-ray spectra, the c/a ratio was found to be equal to 2. Measurements of the electrical properties permitted us to get 7,645 Ω cm for the resistivity and 4,761.1016 cm-3 for the carrier concentration. Characterization by energy dispersive spectrometer (EDS) of the prepared ingots, allowed us to infer that their chemical composition is quasi-stoichiometric. Absorption measurements were performed using a UVVIS- NIR spectrophotometer and a value of 1.13 eV for the band gap width was obtained