Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films

dc.contributor.authorBenramache, Said
dc.contributor.authorChabane, Foued
dc.contributor.authorBenhaoua, Boubaker
dc.contributor.authorLemmadi, Fatima Z
dc.date.accessioned2023-07-03T08:01:48Z
dc.date.available2023-07-03T08:01:48Z
dc.date.issued2013-02-01
dc.descriptionArticleen_US
dc.description.abstractThis paper examines the growth of ZnO thin films on glass substrate at 350 °C using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and electrical properties of ZnO thin films. The as-grown films exhibit a hexagonal structure wurtzite and are (002) oriented. The maximum value of grain size G = 63.99 nm is attained for ZnO films grown at 2 min. The average transmittance is about 80%, thus the films are transparent in the visible region. The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min. The minimum value of electrical resistivity of the films is 0.13 Ω·cm obtained at 2 min. A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350 °C has been reported.en_US
dc.identifier.citationhttps://iopscience.iop.org/article/10.1088/1674-4926/34/2/023001/metaen_US
dc.identifier.urihttp://dspace.univ-eloued.dz/handle/123456789/27381
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.subjectZnO; thin film; growth time; ultrasonic spray techniqueen_US
dc.titleInfluence of growth time on crystalline structure, conductivity and optical properties of ZnO thin filmsen_US
dc.typeArticleen_US

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