Numerical Simulation Of Solar Cells Besed Czts Buffer Layer (zno1-xsx) Using Scaps-1d Software
dc.contributor.author | Fadili, S. | |
dc.contributor.author | Hartiti, B. | |
dc.contributor.author | El Khalidi, Z. | |
dc.contributor.author | Kotbi, A. | |
dc.contributor.author | Ridah, A. | |
dc.contributor.author | Thevenin, P. | |
dc.date.accessioned | 2020-11-05T08:49:51Z | |
dc.date.available | 2020-11-05T08:49:51Z | |
dc.date.issued | 2017-05-01 | |
dc.description | Articale in Journal of fundamental and Applied Sciences Vol. 09, N. 02 | en_US |
dc.description.abstract | Cds buffer layer has many advantages such as large bandgap, and the carrier density. Otherwise, the presence of cadmium is an inconvenient. Research work, are shifted on the possibility of replacing CdS by a buffer layer devoid of cadmium. This manuscript presents the numerical study, using SCAPS-1D program, the effects of sulfur content in the buffer layer Zn (O,S) on the electrical parameters of the solar cell ZnO: Al / i-ZnO / Zn (O, S) / CZTS /. Changes in the band gap and electron affinity of Zn (O, S) were calculated from the law of Vegard. The numerical results of the thickness of the absorbent layer CZTS equal to 2.5µm, show that from the sulfur content equals to 45% we can find the same results with CdS, an efficiency varies slightly, about 19%. | en_US |
dc.identifier.citation | Articale in Journal of fundamental and Applied Sciences Vol. 09, N. 02 | en_US |
dc.identifier.issn | 1112-9867 | |
dc.identifier.uri | http://dspace.univ-eloued.dz/handle/123456789/7421 | |
dc.language.iso | en | en_US |
dc.publisher | University of Eloued جامعة الوادي | en_US |
dc.subject | CZTS; ZnO1-xSx; CdS; SCAPS; Solar cells. | en_US |
dc.title | Numerical Simulation Of Solar Cells Besed Czts Buffer Layer (zno1-xsx) Using Scaps-1d Software | en_US |
dc.type | Article | en_US |
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