Browsing by Author "Kemerchou, I"

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    The electrical properties of Au/GaN and PEDOT: PSS/GaN diodes
    (جامعة الوادي - university of el oued, 2020-12-15) Sadoun, A; Kemerchou, I; Mansouri, S; Chellali, M
    In the present paper, using a numerical simulator, the simulation of Au/n-GaN and PEDOT: PSS/GaN structures were performed in a temperature at room temperature. The electrical parameters: barrier height, ideality factor, shunt resistance series, and resistance have been calculated using different methods: conventional I-V, Norde, Chattopadhyay, and Mikhelashvili. Statistical analysis showed that the Au/GaN structure has a barrier height of (0.6 eV) which is higher compared with the PEDOT: PSS/GaN structure (0.72 eV) and ideality factor (1.88 and 2.26) respectively. The values of resistance shunt were increased from 77150.056 Ω to 11207586 Ω. It is observed that the leakage current increased from 6.64E-5 to 4.98926E-5A at −0.85 V.
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    GPVDM simulation of layer thickness effect on power conversion efficiency of CH3NH3PbI3 based planar heterojunction solar cell
    (جامعة الوادي - university of el oued, 2018-06-25) Hima, A; Khechekhouche, A; Kemerchou, I; Lakhdar, N; Benhaoua, B; Rogti, F; Telli, I; Saadoun, A
    Perovskite-based solar cell technologies have been a very attractive area of research in recent years. Organic-inorganic perovskite materials are in an increased evolution in power conversion efficiency. Inorganic materials have been tested at the laboratory level but their power conversion efficiency is still limited. In this paper, we used the GPVDM software to study the effect of some parameters on power conversion efficiency in a planar heterojunction solar cell based on CH3NH3PbI3 as an absorbing layer. The modifications were made by considering layers of perovskite without defects. The results show that the efficiency of the power conversion can be improved by adjusting layer thickness; in our case power conversion efficiency was increased from 9.96 % to 12.9 %.