Browsing by Author "Gahtar, Abdelouahab"

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    A comparative study on structural and optical properties of ZnO and Al-doped ZnO thin films obtained by ultrasonic spray method using different solvents
    (Urban & Fischer, 2014-07-01) Gahtar, Abdelouahab; Rahal, Achour; Benhaoua, Boubaker; Benramache, Said
    Abstract Transparent conducting ZnO and Al doped ZnO thin films were deposited on glass substrate by ultrasonic spray method. The thin films with concentration of 0.1 M were deposited at 350 °C with 2 min of deposition time. The effects of ethanol and methanol solution before and after doping on the structural, optical and electrical properties were examined. The DRX analyses indicated that ZnO films have nanocrystalline nature and hexagonal wurtzite structure with (1 0 0) and (0 0 2) preferential orientation corresponding to ZnO films resulting from methanol and ethanol solution, respectively. The crystallinity of the thin films improved with methanol solution after doping to (0 0 2) oriented. All films exhibit an average optical transparency about 90%, in the visible range. The band gaps values of ZnO thin films are increased after doping from 3.10 to 3.26 eV and 3.27 to 3.30 eV upon Al doping obtained by ethanol and methanol solution, respectively. The electrical conductivity increase from 7.5 to 15.2 (Ω cm)−1 of undoped to Al doped ZnO thin films prepared by using ethanol solution. However, for the methanol solution; the electrical conductivity of the film is stabilized after doping.
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    Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique
    (IOP Publishing, 2013-07-01) Gahtar, Abdelouahab; Benramache, Said; Benhaoua, Boubaker; Chabane, Foued
    Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350 °C. Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%. All the films have low absorbance in the visible region, thus the films are transparent in the visible region; the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 (Ω·cm)−1. So the best results are achieved in Al doped ZnO film with 3 wt%.