Gahtar, AbdelouahabBenramache, SaidBenhaoua, BoubakerChabane, Foued2023-07-032023-07-032013-07-01https://iopscience.iop.org/article/10.1088/1674-4926/34/7/073002/metahttp://dspace.univ-eloued.dz/handle/123456789/27390ArticaleTransparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350 °C. Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%. All the films have low absorbance in the visible region, thus the films are transparent in the visible region; the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 (Ω·cm)−1. So the best results are achieved in Al doped ZnO film with 3 wt%.enZnO:Al; thin films; TCO; ultrasonic spray techniquArticle