Mebarkia, C.Dib, D.Zerfaoui, H.Belghit, R.2020-10-252020-10-252016-05-01Articale in Journal of fundamental and Applied Sciences Vol. 08, N. 021112-9867http://dspace.univ-eloued.dz/handle/123456789/7294Articale in Journal of fundamental and Applied Sciences Vol. 08, N. 02In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS) looks promising. Cu2ZnSnS4 (CZTS) is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV [01] with a large absorption coefficient over 104 cm-1). Indeed, the performance of these cells exceeded 30% in recent years.In the present paper, our work based on modeling and numerical simulation, we used SCAPS to study the performance of solar cells based on Cu2ZnSnS4 (CZTS) and thus evaluate the electrical efficiency η for typical structures of ZnO / i- ZnO / CdS / CZTS and ITO / ZnO / CdS / CZTS. Furthermore, the influence of the change of CdS by ZnSe buffer layer was treated in this paper.enSolar cell; photovoltaic; thin film Cu2ZnSnS4; simulation; SCAPS.Article