Sadoun, AliKemerchou, Imad2023-05-142023-05-142020-06-20Sadoun, Ali. Kemerchou ,Imad. Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K). International Journal of Energetica. Vo5. No 01.20/06/2020.faculty of technology. university of el oued. [visited in ../../….]. available from [copy the link here]2543-3717https://dspace.univ-eloued.dz/handle/123456789/22807ArticleIn this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K). Electrical parameters of Au/InSb/InP such as barrier height (Φb), ideality factor and series resistance have been calculated by employing the conventional (I-V), Norde, Cheung and Chattopadhyay methods. Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance, RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K) are 0.602-0.69eV, 1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas- Silvaco-Tcad logicalenCheung and Chattopadhyay methods, Schottky barrier, Schottky diode, SBH, SilvacoArticle