Benattou, H.Benramdane, N.Medles, M.2020-11-292020-11-292017-09-01H. Benattou, N. Benramdane, M. Medles. FABRICATION AND INVESTIGATION OF STRUCTURAL, OPTICAL AND DIELECTRICAL PROPERTIES OF BISMUTH TRISULFIDE (BI2S3) THIN FILM. Journal of fundamental and Applied Sciences. Vol. 09, N. 03. 2017. [date de consultation]. Disponible à l'adresse1112-9867http://dspace.univ-eloued.dz/handle/123456789/7656Articale in Journal of fundamental and Applied Sciences Vol. 09, N. 03Bismuth trisulfide (Bi2S3) in thin films was prepared by spray pyrolysis method at temperature of 280°c. The films were of orthorhombic crystal structure, and direct optical gap of 1.61eV. Tangent of dielectric losses, AC conductivity, dielectric constant and electric modulus were investigated versus the frequency (5Hz-13MHz) and the temperature (293-333°K). The single electric relaxation time is of order of nano-second and DC conductivity from 0.29 to 3.22 (Ω.cm)-1, were indicated from electrical analysis. The observed behavior was described in term of a multi-hopping process. The dependence of ‘σAC’ and ‘S’ with temperature, were interpreted by the model (CBH). The density of the localized states N(Ef) is of order of 1020 cm-3.Ω-1, the maximum barrier height WM of order of 0.1eV, and the activation energy (Ea ≈0.12eV ) were calculated for these materials.enthin films; Bi2S3; spray pyrolysis; AC conductivity; dielectric propertiesArticle