Gadedjisso-Tossou, K.SDzagli, M.MMohou, M.ARouillard, Y2023-05-292023-05-292019-05-01K.S. Gadedjisso-Tossou1,2,*, M.M. Dzagli1, M.A. Mohou1, Y.Rouillard, DETERMINATION OF SPONTANEOUS EMISSION RATE AND CARRIER RECOMBINATIONCHANNELS IN GaInAsSb/AlGaAsSbMULTIPLE QUANTUM WELL LASER DIODES EMITTING NEAR 2.3 μm. Journal of Fundamental and sciences. vol.11, no 2. May 2019. Faculty of exact sciences. university of el oued. [visited in 01/05/2019]. available from [kgadedjisso@univ-lome.tg]https://dspace.univ-eloued.dz/handle/123456789/24757articleIn this paper, Amplified spontaneous emission spectra is used to extract the gain and internal loss of 2.3 μm narrow ridge-waveguide GaInAsSb-AlGaAsSb quantum well laser diodes by Cassidy’s method. The spontaneous emission intensity was extracted using the average value of the amplified spontaneous emission intensity. The dependence of the integrated spontaneous emission intensity on injection current has been studied. The results show that the current is dominated by radiative recombination at this emission wavelength.enAmplified spontaneous emission; Spontaneous emission; Gain; RecombinationArticle