Sadoun, AKemerchou, IMansouri, SChellali, M2023-05-142023-05-142020-12-15Sadoun ,A. Kemerchou, I. Mansouri,S. Chellali, M. The electrical properties of Au/GaN and PEDOT: PSS/GaN diodes. International Journal of Energetica. Vo5. No 02.15/12/2020.faculty of technology. university of el oued. [visited in ../../….]. available from [copy the link here]2543-3717https://dspace.univ-eloued.dz/handle/123456789/22861Article ArticleIn the present paper, using a numerical simulator, the simulation of Au/n-GaN and PEDOT: PSS/GaN structures were performed in a temperature at room temperature. The electrical parameters: barrier height, ideality factor, shunt resistance series, and resistance have been calculated using different methods: conventional I-V, Norde, Chattopadhyay, and Mikhelashvili. Statistical analysis showed that the Au/GaN structure has a barrier height of (0.6 eV) which is higher compared with the PEDOT: PSS/GaN structure (0.72 eV) and ideality factor (1.88 and 2.26) respectively. The values of resistance shunt were increased from 77150.056 Ω to 11207586 Ω. It is observed that the leakage current increased from 6.64E-5 to 4.98926E-5A at −0.85 V.enSchottky diode; Au/n-GaN; PEDOT: PSS/GaN; (I-V), Norde, Cheung and Chattopadhyay methods; Leakage current; Resistance shuntArticle